High Electron Mobility Transistor Market Is Projected To Grow Robustly By 2030
High Electron Mobility Transistor Industry The global high electron mobility transistor market size is estimated to reach USD 9.93 billion by 2030, expanding at a CAGR of 7.8% from 2023 to 2030, according to a new study conducted by Grand View Research, Inc. The market growth is driven by increasing consumer demand for high-frequency electronics, such as satellite TV receivers, cell phones, and radar systems. High electron mobility transistors (HEMTs), designed for millimeter-wavelength frequencies, play a pivotal role in enabling the performance and efficiency of these technologies. An increasing number of semiconductor companies using HEMTs for various devices is another major factor driving market growth. For instance, in August 2023, ROHM Co. Ltd., a power semiconductor manufacturer, introduced EcoGaN power-stage ICs named BM3G0xxMUV-LB series with gate driver & built-in 650V gallium nitride (GaN) HEMT. These ICs were optimized for inside industrial applicatio...